According to one embodiment, in a nonvolatile semiconductor memory device, a data latch circuit which is connected to a sense amplifier circuit controls a data writing operation and a data reading operation to and from a nonvolatile memory cell array through a data bus, and outputs the stored data to the data bus when the sense amplifier circuit performs the data writing operation. The method includes receiving a glyph spacing, moving a first glyph toward a second glyph along an axis, identifying an intersection of a first axis coordinate of the first glyph with a second axis coordinate of the second glyph, and moving at least one of the glyphs along the axis to separate the first and second axis coordinates of the respective first and second glyphs by the glyph spacing. The inverter also includes a component that generates synchrophasors from characteristics of electrically proximate AC. The sheets of porous polymers may include through holes. The carton also may include a feature which allows the flip top lid to be securely re-closed after initial opening of the lid. The at least one case-open switch assembly includes an arrangement of electrical contacts arranged on a base surface and a resiliently deformable conductive element, which defines a short circuit between at least some of the arrangement of electrical contacts only when the housing is closed.