A CMOS device includes high k gate dielectric materials. Directly converting may include converting at least a portion of the content of the data storage object into at least a portion of the object ID. The magnetic layer further includes a plurality of layers, each made of Co based alloy including at least one of oxide and nitride as additional content. The bottom die contains contact pads on the front side that couple with one or more passive components fabricated on the back side of the top die to complete the circuit. The amount of the light is controlled optimally by the variable selection of the frequency of the second clock signal.