Methods of forming metal silicide layers in a semiconductor device are provided in which a first metal silicide layer may be formed on a substrate, where the first metal silicide layer comprises a plurality of fragments of a metal silicide that are separated by one or more gaps. 1 to 80% by weight of a filler andor reinforcing material, and c) 0. The loan originator provides services necessary for the origination of the mortgage loan and not duplicative of services provided by the loan broker. Thereafter, at the targeted depth, the sockets or plugs are permitted to be separated in the couplers at the both ends of the water sampling pipe by using a lift device, so that the both ends of the water sampling pipe are sealed to simultaneously taking groundwater samples at multiple depths. The sample holders are placed on a plurality of sensors which preferably comprise an array of microbalances providing output signals comprising mass data on the array of samples.