Carborane may be used as a precursor to form low dielectric constant dielectrics. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. When the device is positioned a safe distance away from the user, the media is transmitted out of storage over the network to the recipient. In a preferred embodiment, the system also identifies the type of weapon firing a gunshot. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device. Alternately the contact members can be formed as indentations for testing bumped wafers.