The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. The in-situ trailing shield gap deposition process removes the pre-sputter process that can damage the write pole material. A data cache is coupled to the parent processor, and a dual port memory is respectively associated with each child processor part and parcel of a unified memory architecture. The wrapper layer can be configured to query the function layer to determine function definitions and pass function execution requests and results with the function layer. Each flange defines a pivot bore at an end of the channel. A phase change material is disposed in the chamber for absorbing thermal energy from the liquid and then releasing the thermal energy back to the liquid to maintain the temperature of the liquid.