A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser assembly. In an implementation, an interruption is detected at the client device in receipt of a stream of content from a distribution system that is to be recorded locally in memory at the client device. The memory device includes a data receive circuit to receive data at the frequency of the second clock signal and may also include a data transmit circuit to transmit data at the frequency of the second clock signal. The components are elongated members identified as:. The described self-assembled interconnect structure is particularly useful in display device fabrication.