A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. This realizes a data structure that causes the recording and deleting places on the information storage medium to correspond spuriously to places on a single tape, such as a VTR tape. When integrating seismic data into the modeling process, the seismic-frequency passband constitutes the mid-frequency passband model. The valley current is of a value greater than the first current value and the peak current is of a value lying between a second current value and the sum of said second value plus the value of the current generated the generator means. There should also be dislocations or fissures where the SiGe growth from the each nucleation source finally join.