The present invention discloses a method for manufacturing a flash memory cell by using a trench method which can eliminate an increase of a stepped portion in a flash process as compared to a logic process by forming a floating gate on a STI portion since the floating gate is added to the flash memory as compared to a logic process. The superior and inferior bone contacting members include at least two bone contacting components interconnected via one or more lateral wire nettings such that the implant is vertically and laterally expandable in situ from a first insertion configuration to a second expanded configuration. The member has shape memory properties and is adapted to move the first end towards the second end. The resilient element provides resilient resistance when the first and second bone anchor assemblies are moved toward one another and provides no resistance and is separable from the second bone anchor assembly when the first and second bone anchor assemblies are moved away from one another.