1460294554-03493cd9-80fc-4f00-8f75-8935bdc676c0

The present invention relates to improved metal-oxide-semiconductor field effect transistor devices comprising source and drain regions having slanted upper surfaces with respect to a substrate surface. Furthermore, a recessed section is provided on this rim drop section, and a detecting device main body of a tire air pressure detecting device is accommodated in this recessed section. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times. The color filter frame comprises at least one bracket and a fixing frame. The linkage is formed by a pin secured to one segment or element and which pin passes through the bore into the hollow core of the adjacent abutting segment.