A method used to manufacture a semiconductor device comprises providing a first conductive container capacitor top plate layer and etching the first conductive container capacitor top plate layer to form a plurality of openings therein. The connector, sleeve, and the method can all used for high-voltage electrical devices, for example, x-ray generating devices. In the process of rotating the field pattern, hot and cold spots in the field pattern are averaged out over time. The first sub electrodes are disposed on two opposite sides of the first main electrode, and a first gap is formed between the first main electrode and the first sub electrode.