Methods of selectively forming metal silicides on a memory device are provided. A printing method and a computer readable medium storing program code for causing a computer to perform the steps of the method are also provided. The first mold set is then moved horizontally away to permit the finite length of thermoplastic tube therein to be blown into a hollow article, and thereafter removed from the first mold set at a second position of the first mold set. When a discrepancy between the promised service level and the current service level occurs, a rebate is generated for the customer. The aft channel discharges air through the inner band outside the inner plenum in split flow at different pressures. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.