A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. In one embodiment, the substrate is produced by forming a layer of capacitive dielectric material on a dielectric layer and thereafter forming channels with the capacitive material, e. Other embodiments are described and claimed. Upon removal of self-FEXT from the second sensor, a linear combiner configured to combine information relating to the victim line and the second line is learned. The via is lined with a diffusion barrier.