In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating gate and a control gate are stacked. At least one first trench is formed in a dielectric layer positioned on a semiconductor substrate. A clustering engine is employed to compute a set of exemplars that concisely represent the population. A value stored in each cell is based on a probability that the system will transition from a first region associated with the cell to a second region associated with the cell and a rate of separation of trajectories of the embedded data within at least one of the first region and the second region.