A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The polarization scrambler scrambles a state of polarization of an optical signal that carries user information. A receiving hole extends from a side of the box end toward the other side of the box end but spaced from the other side of the box end.