A semiconductor module is provided which includes a beat spreader, at least two semiconductors thermally coupled to the heat spreader, and a plurality of electrically conductive leads electrically connected to the semiconductors. The method includes processing a semiconductor substrate of known impurity levels on the epitaxial susceptor, and measuring the impurity levels after epitaxial processing by drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. The first image information is transferred to a control device. Hybrid maize seed, plant or plant part produced by crossing the inbred variety PHE4N or a trait conversion of PHE4N with another maize variety. Upon contact with the plasma, they generate active species typical of reacting with the surface of the substrate. In one variation, the temperature is determined using a relationship function for characteristics of two heating elements, maintained at two different temperatures, along with the power needed to maintain constant temperature in each element, and by eliminating dependence on other variables for the determination, such as the velocity of the gas.