A method is provided for fabricating a silicon -on-insulator double-diffused metal oxide semiconductor transistor with a stepped channel thickness. A collector electrode is mounted within the ionization volume. Slots 26mC, 26mM, and 26mY are provided at points disposed opposite nozzle Nos. The service module is also used to accept a securities message. The injection tool has a plurality of radially positioned internally extending spray nozzle elements in trans-lateral angular alignment to the longitudinal axis of a support and supply cylinder. The inner member may include a flared distal end that abuts, and preferably conforms to, the proximal end of the device, when the device is held within the outer tube lumen.