A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenide channel layer and by double doping through the use of an additional silicon doping spike. The solution is characterized by containing, in addition to the color developer compound and conventional photographic developer solution components, a water soluble pyrrolidone polymer, a high concentration of sulfite ion and a low concentration, or the absence of, bromide ion. The roof support with integral gutter is made by the pultrusion process, which eliminates the need for additional and separate components to provide rigidity and strength to the roof support. The first transporter may transport the first portion to the mixer. A protrusion protrudes radially outwardly from each hinge projection and is received in the rotation guide.