This invention adds to the art of replacement source-drain cMOS transistors. Therefore, it is possible to inhibit the damaging of the deposited film formed on the surface of each of the work pieces and the production of projections on the deposited film, and to form a deposited film at a high quality in respect of a corrosion resistance and the like and at low cost. A layer of particulate material from the source is deposited onto the substrate with the thickness of the layer depending upon the strength of the electrostatic charge.