The present invention provides a method for fabricating a dual gate semiconductor device. A pressure flange fixed on a periphery of the filling pipe absorbs fluctuation of the pressure of the liquid food in the tube below the pressure flange, and prevents the liquid food pressure from dropping to negative pressure to keep the pressure of the liquid food in the tube below the pressure flange at a positive pressure. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The alloy material is prepared by blending Ni, Ti and Nb and melting the blend. The compounds are expected to be hydroxylated at the carbon atom to which X is joined, by cytochrome P450, in particular by CYP1B1, expressed at high levels in tumors.