A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. The configuration is guided by winding tracks on either exterior side of shell. The spectra can then be used to train a neural network, for example using genetic algorithm-based training, to recognize each spectra and to recognize characteristics of the classifications. Next, a gate all-around field effect transistor is formed. Compression assist springs in the tubes are compressed by the cables when the rear panel is in its closed position and provide a counterbalance force to assist in opening the panel.