An electronic device, in which a flat plate semiconductor and dumets connected to surface electrodes on the front and back surfaces of the semiconductor and to lead wires are encapsulated in a glass tube. This gate further includes a unique identifier. The keys and keyways engage one another via a sliding action to form the body portion. Source and drain contact structures respectively formed on the shallow trench isolation over the source and drain diffusion regions and extend through the shallow trench isolation to contact the source and drain diffusion regions. The sensor region is divided into at least three semiconductor parts by the reference pressure chamber, the second insulating portion, and the trench.