The invention relates to a method for producing a graphene sheet on a platinum silicide, wherein the platinum silicide is in the form of a layer or a plurality of pins. As for a semiconductor device, the impurity concentration in a channel formation portion is implanted not uniformly along the length direction of a gate in the complete depletion type silicon on insulation transistor. However, upon exerting a tension force on the stem, the pressure exerted by the junction is reduced such that the patient’s bladder may be intentionally voided.