A structure to diminish high voltage instability in a high voltage device when under stress includes an amorphous silicon layer over a field oxide on the high voltage device. In a system having a plurality of information producers and a plurality of information subscribers, paths are identified over which information traverses, and within which the information is subject to select andor transform operations. In one embodiment, the next to the lowest metallization layer running in the same orientation as the polysilicon gate, utilized to access the input or output of the interconnected cell structures is relaxed to match the minimum contacted gate pitch and the metal is aligned above each polysilicon gate. The system may include a knife assembly to cut the string of cushions holding pins and the tension-relief diverter it is located at the inlet of the duct to hold tension on the string of cushions while the string is being separated. Optionally, one or more additional applying and drying sequences can be repeated with a water-soluble polymer from the group of polyanionic species, polycationic species and uncharged polymer species, so that a predetermined plurality of layers are built up upon the substrate.