A semiconductor device includes a first mono-crystallized semiconductor layer; and a second mono-crystallized semiconductor layer; wherein said first and second mono-crystallized semiconductor layers are overlaying one on top of the other, and wherein said first mono-crystallized semiconductor layer comprise repeating memory structure with sub structures defined by etching. The sample points can be used in processing in parallel, with the results subsequently collected and used as necessary in subsequent rendering operations. The calculated magnification ratio is used to multiply the dimensions of the package image to obtain the dimensions of the package. Each response includes an identity of the responding device and an indication of the capabilities of the responding device.