An object is to provide a fine forging method for forming partitions of recesses precisely and forming recess shapes for pressure generation chambers etc. A die is positioned on the electrically insulated leadtips. The gate electrode can be easily connected to the contact electrode, the high-concentration region can be disposed only on the channel region, making it possible to maximize overall performance of the semiconductor device. One of the optically anisotropic layers A and B is a layer made from liquid crystal molecules, and the other is a polymer film or a layer made from liquid crystal molecules. Furthermore, the floor section of the slide-out room is flush with the floor section of the fixed room, and proximal ends of the sidewall sections of the slide-out room are flush with an inner surface of one of the sidewall sections of the fixed room when the slide-out room is fully extended. A first polishing is performed to polish away the silicon oxynitride layer and oxide layer using a first slurry having high selectivity of oxide to nitride.