A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. In particular, systems and methods for providing non-voice message delivery to intended recipients with increased speed and reliability to multiple users on multiple platforms. The dielectric layer is patterned to provide access to at least two contacts in the metal layer. 4 mm, and having an outer circumferential surface that has been surface treated to achieve a surface roughness with a peak-to-valley roughness measurement of at least 10 \u03bcm.