An improved gate electrode provides greater tolerances to higher temperature annealing treatments, and is useful in connection with the formation of self-aligned contacts as are needed for high density embedded DRAM applications. The coating comprises a cationic alternate fluorene-based copolymer with phosphonium salt terminal groups embedded in an in-situ cross-linked polymer. The strain gauges are configured to measure strain at the load cells caused by the object on the weighing surface. 0 and a degree of substitution with propyleneoxy group of from 0. The stack includes at least one layer. The invention also relates to radio devices implementing the method described above.