A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. A gate conductor is on the substrate over a gap between the STI structure and the source region, and partially overlaps the drift region. A pocket is formed in the main body for receiving light from a light source. In another embodiment, the cover may be allowed to pivot relative to the comb so that the cover can be rotated away from the comb. A non-transitory computer readable program storage unit encoded with instructions that, when executed by a computer, perform the method.