A semiconductor device includes a strained-silicon channel formed adjacent a source and a drain, a first gate formed over a first side of the channel, a second gate formed over a second side of the channel, a first gate dielectric formed between the first gate and the strained-silicon channel, and a second gate dielectric formed between the second gate and the strained-silicon channel. The wireless communication device records a plurality of directional audio signals. A coupling is attached to the projection portion at one end of the coupling. The condenser fins facilitate cooling and condensing of dielectric fluid vapor generated within the sealed compartment.