Subject matter described pertains to apparatuses and methods for operating a memory device. The method further comprising randomly distributing the data on the overloaded storage unit to the other storage units within the mass storage area. The integrated circuit structure also comprises a second complementary MOS device comprising a dual drain extension structure. The test tool selects a discrete part of the structured data and fuzzes the selected discrete part. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer. The method comprises coating a print medium with a high molecular weight additive having low volatility.