Apparatus and methods are disclosed for electroplating conductive films on semiconductor wafers, wherein field adjustment apparatus is located in a reservoir between a cathode and an anode to influence the electric field used in the plating process. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. It is judged whether or not the n-rows and m-columns squares in the matrix in stop are linked with the adjacent squares, based on patterns of the respective squares, and a win is judged based on a number of linked squares. The present invention relates to the polishing of a semiconductor wafer material from which an integrated circuit is made.