A data structure for a flash memory and data readingwriting method thereof are disclosed. Coupled between a first MOSFET and second MOSFET of the current mirror, a low pass filter with selectable filter poles comprises a plurality of resistor-configured MOSFETs coupled to at least one capacitor-configured MOSFET to provide one of a fast settle time and improved filtering for the current mirror in one embodiment of the invention. The processor can be adapted to determine a procedure based upon the identified predetermined profile. The second mobile application is configured to provide data to the data storage location. The present invention can prevent an increase of serial resistance at a connective part between the ribbon and the cell and can significantly reduce the degradation of generation efficiency by preventing the corrosion of the interconnector ribbon due to the external environment. The beads may be trapped in the form of an array of localized magnetic field regions.