A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The durable SFR-ECC exhibits thermal conductivities sufficient for fire resistance with increased tensile ductility and impact resistance. The phosphor exhibits a broad emission in the UVC region in the wavelength range from about 220 nm to about 280 nm with the peak emission occurring in the wavelength range from about 230 nm to about 240 nm. The second FET is an ultrathin FET of a second polarity type and includes a gate, a source and a drain.