To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A magneto-optical material layer is deposited on a substrate, an Si layer is deposited on the aforesaid magneto-optical material layer, a waveguide is formed on the aforesaid Si layer, and the aforesaid magneto-optical material layer is magnetized so as to be able to cause a light propagating in the aforesaid waveguide to generate a nonreciprocal phase change. The second battery can be charged through the power port when the modular audio accessory is placed in the compartment. 2 parts by weight of Sb per 100 parts by weight of the positive electrode active material on at least a part of the surface thereof where the positive electrode active material layer is in contact. A via hole is etched through the third layer, thereby exposing a portion of the second layer at the bottom of the via hole. A recording processing section 20 records the generated sensing meta data to a record medium 21.