The present application discloses a method for manufacturing a semiconductor device, comprising: forming a T-shape dummy gate structure on the substrate; removing the T-shape dummy gate structure and retaining a T-shape gate trench; filling successively a gate insulation layer and a metal layer in the T-shape gate trench, wherein the metal layer forms the T-shape metal gate structure. The sheet is sent to the customer for stamping and customer annealing. The plurality of cams includes at least two protruded cams. The presentment apparatus includes a first rigid layers a second compressible layer, and a third lower friction layer. The image processing apparatus may synthesize an input frame with texture information of another frame and provide an output frame with an enhanced texture component. The one or more property indicators may interface with a circuit, such as mechanically interface with the circuit, in order for the circuit to determine the property of the strobe cover.