A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. Each sample x is divided by A, the quotient is rounded to the number of significant digits, and the rounded quotient y is encoded. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes. 5\u201330% bismuth oxide of the composition by weight and silica oxide at about 54\u201370% of the composition by weight.