1460616958-1f20d296-3147-499b-bd26-3705fe476b3c

A method is provided for forming a semiconductor device that reduces metal-stress-induced photo misalignment by incorporating a multi-layered anti-reflective coating over a metal layer. Resolution is made high by super-resolution processing. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height. This reinforcement geometry permits use of a thin helmet shell. The liquid volume may be displayed on the gauge itself or may be transmitted via telemetry to an external device. When an exceptional process is detected, all the cores operate.