A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The processing of the incoming video information and the outgoing video information is performed by the combination of the processing module, co-processor and the video accelerator module. A configuration controller performs control so that a first configuration including a first line memory set and a decompression circuit set and a second configuration including a second line memory set are selectively set in a reconfigurable circuit. Each cylinder chamber is connected to a separate hydraulic line that serves both as pressure supply line and as return line. The elongate member can pass through orifices in the platform to enable relative vertical motion between the platformvessel and elongate member. The case frame defines an elongated channel for receiving the elongated channel therein.