A process sequence for forming a MOSFET device featuring a high k gate insulator layer, wherein the use of the high k gate insulator layer requires no additional photolithographic procedures, has been developed. A controller is in communication with the robot, and controls actuation of the tendon-driven finger using force control. 2 and y, representing the weight ratio of the two oxides, has a value of 0. According to some embodiments, the CF films may be deposited using a microwave plasma source containing a radial line slot antenna. Each of the multiple tablet orders corresponds to a multiple tablet package labeled with tablet specific information.