In a nonvolatile memory using floating gates to store charge, individual floating gates are L-shaped. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process. In another aspect, the invention provides a method for reducing the level of asparagine in cocoa beans comprising adding an asparagine-reducing enzyme to cocoa beans. An electrical signal is applied between the first and second ends of the at least one of the plurality of wires and the electrical parameter of the at least one of the plurality of wires is responsively measured. In addition, a process for measuring the moisture and the carbon dioxide concentration.