1460987881-23e513fd-9496-445e-9edb-a93ff9bf8722

A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. Charcoal briquettes supported within the tubular housing by the grate in the supporting position are released from the grate and fall through the open lower end of the tubular housing when the grate moves to the releasing position. A level shift circuit to shift the output voltage to a potential direction opposite to the first potential direction is provided in a preceding stage of a first input terminal of the voltage comparison circuit, and the input voltage is input to a second input terminal of the voltage comparison circuit. Additives may be provided to flavor or otherwise nutritionally enhance the processed Milo. This process includes applying the lubricant composition to at least one of the surfaces. A user-friendly photographing device can thus be provided.