A semiconductor device having a trench isolation structure and a method of fabricating the same are provided. According to the invention, the reflectance of the interference film amounts, on average, to at least 75% in the wavelength range from 800 to 2200 nm, whereas the transmittance amounts, on average, to at least 90% in the wavelength range from 400 to 760 nm. A high-density plasma oxide layer is deposited on the first polysilicon pattern, wherein the HDP oxide layer has a protuberance over the first polysilicon pattern. The two lateral portions extend from the two opposing lateral sides of the bottom portion, respectively, and face each other. The second physical layer communication protocol may be different from the first physical layer communication protocol or the first and second transceivers may be configured to operate on different frequencies. The video processing device merges the input images in a series of merging rounds.