A NAND-type flash memory device includes a plurality of row selectors each corresponding to memory blocks of each mat therein. The antenna has a ground copper and a radiation copper. The scheme of the present invention is shown to be superior in term of CPU resource consumption and memory storage space when compared with an equivalent implementation using prior art time domain convolution techniques. Dielectric layers containing such Zr\u2014Sn\u2014Ti\u2014O films may have minimal reactions with a silicon substrate or other structures during processing.