Described herein is a reading circuit for a nonvolatile memory device, wherein the currents flowing through an array memory cell to be read, and a reference memory cell with known contents, are converted into an array voltage and, respectively, into a reference voltage, which are compared to determine the contents of the array memory cell. The base includes a main plate and left and right end plates which project from left and right edges, respectively, of the main plate. A control loop is used to optimize ablation effect by generating a feedback signal according to the measured indicative property, sending the feedback signal to a control unit, and adjusting an output parameter of the pulsed laser according to the feedback signal.