A handheld electronic device and a flashlight module are provided. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. When the remote control command is appropriate the remote control command is transmitted to a corresponding device by the TMU. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric. The gel compositions are used in structural parts or articles.