An apparatus for crystallization of silicon includes a crucible for containing silicon, a heating and heat dissipating arrangement provided for melting the silicon contained in the crucible and for subsequently solidifying the molten silicon, and an electromagnetic stirring device provided for stirring the molten silicon in the crucible during the solidification of the molten silicon. Each housing has a plurality of channel-shaped terminal accommodation chambers. The thermally conductive casing 2 includes an irradiation opening 2b, is formed so as to be widened toward the irradiation opening 2b, has its outer circumferential surface exposed outwardly, and has a substrate mounting part 2c secured on its inner circumferential surface. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed.