A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. A first comparison output signal is generated which exhibits a voltage transition when the output signal reaches the first reference voltage, and a second comparison output signal is generated which exhibits a voltage transition when the output signal reaches the second reference voltage. The electrodes are spaced along a length of the distal section and may be interspersed with at least one temperature sensor located between electrodes.