Etch uniformity is improved in that a specified material layer to be etched is exposed to an ion beam so as to implant an ion species, wherein at least one implantation parameter is varied in conformity with local etch rates of the specified material layer. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). Corresponding software is also provided. The first frame or image of the program is displayed and paused in response to the control signal.