A fabrication process is provided for a 3D stacked non-volatile memory device which provides a source contact to memory holes at a bottom of a stack. The modules can communicate with the unit via a wired or wireless connection. The film thickness of a first silicon nitride film in the first ONO film is larger than the film thickness of a second silicon nitride film in the second ONO film. The bar members are then wrapped with an inner covering and an outer covering.