An object of the present invention is to provide a joined structure effective for preventing crack formation after thermal cycles. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. For example, a first memory cell can have a first control gate on the first side of the conductive pillar and a first charge trap interposed between the first side of the conductive pillar and the first control gate. Admission Control for Class C1 evaluates the probability where source and destination nodes are not one hop neighbors.